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2N7373 - Complimentary Power Transistors

General Description

These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process.

This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.

Key Features

  • Planar Process for Reliability Fast Switching High-Frequency Power Transistors For Complementary Use with Each Other 15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package Leads can be Formed All Terminals Isolated from the Case Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages JAN/TX/TXV/JANS.

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
2N7371 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
2N7372 Complimentary Power Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • 2N7372 - PNP 2N7373 - NPN • Power Supply Inverters and Converters General Purpose Amplifiers FEATURES: • • • • • • • • Planar Process for Reliability Fast Switching High-Frequency Power Transistors For Complementary Use with Each Other 15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package Leads can be Formed All Terminals Isolated from the Case Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages JAN/TX/TXV/JANS DESCRIPTION: These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process.