JANKCE1N5806 Datasheet PDF - Microsemi Corporation 6 AMPS FAST RECOVERY RECTIFIER Specs

JANKCE1N5806 - 6 AMPS FAST RECOVERY RECTIFIER

Datasheet Summary

Features

Chip Outline Dimensions: 41 x 41 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 50,000Ã Nominal Bonding Area: 23 x 23 mils Min. Back Metallization: Gold Junction Passivated with Thermal Silicon Dioxide - Planar Design Backside Available with Solderable Ag Backside as JANHCF or JANKCF 2.5 AMPS FAST.

Datasheet Details

Part number	JANKCE1N5806
Manufacturer	Microsemi Corporation
File Size	46.75 KB
Description	6 AMPS FAST RECOVERY RECTIFIER
Datasheet	JANKCE1N5806 Datasheet
Additional preview pages of the JANKCE1N5806 datasheet.

📁 Similar Datasheet

JANKCE2N5152 - NPN Power Silicon Transistor (VPT)

JANKCA1N6638 - Silicon Switching Diode (VPT)

JANKCA1N6642 - Silicon Switching Diode (VPT)

JANKCA1N6643 - Silicon Switching Diode (VPT)

JANKCB1N5711 - Schottky Barrier Diode (VPT)

JANKCC1N4099 - Zener Diode (VPT)

JANKCC1N4100 - Zener Diode (VPT)

JANKCC1N4101 - Zener Diode (VPT)

JANKCC1N4102 - Zener Diode (VPT)

JANKCC1N4103 - Zener Diode (VPT)

Full PDF Text Transcription

Click to expand full text

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 1N5802 1N5804 1N5806 JANHCE and JANKCE JANHCF and JANKCF FEATURES: • • • • • • • • Chip Outline Dimensions: 41 x 41 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 50,000Ã Nominal Bonding Area: 23 x 23 mils Min. Back Metallization: Gold Junction Passivated with Thermal Silicon Dioxide - Planar Design Backside Available with Solderable Ag Backside as JANHCF or JANKCF 2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS Chip Type: RH TYPE JANHCE1N5802 JANHCE1N5804 JANHCE1N5806 JANKCE1N5802 JANKCE1N5804 JANKCE1N5806 VR 50V 100V 150V 50V 100V 150V VBR 60V 110V 160V 60V 110V 160V IO Tj = 75° C 2.5A 2.5A 2.5A 2.5A 2.5A 2.

Published: Apr 7, 2005 |