MRF951 Description
Designed for use in high gain, low noise small-signal amplifiers. ee DataSh RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 20 1.5 100 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75ºC .475 Storage Junction Temperature Range -65 to +150 Maximum Junction Temperature 150 ºC ºC Watts Tstg...
MRF951 Key Features
- Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noise Figure
- 1.3dB @ 1GHz Ftau
- 8.0 GHz @ 6v, 30mA Cost Effective Macro X Package
- Macro X