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MRF951 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

General Description

Designed for use in high gain, low noise small-signal amplifiers.

Key Features

  • Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noise Figure.
  • 1.3dB @ 1GHz Ftau - 8.0 GHz @ 6v, 30mA Cost Effective Macro X Package.
  • Macro X.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noise Figure – 1.3dB @ 1GHz Ftau - 8.0 GHz @ 6v, 30mA Cost Effective Macro X Package • Macro X DESCRIPTION: Designed for use in high gain, low noise small-signal amplifiers. DataSheet4U.com ee DataSh ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 20 1.5 100 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75ºC .