MSAFZ50N10A Datasheet | Microsemi

atures - - - - - - - Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 100 100 +/-20 +/-30 50 40 200 50 18.5 400 TBD 300 -55 to +150 -55 to +150 50 200 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps m J m J V/ns Watts °C °C Amps Amps °C/W Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100°C Tj= 25°C Tj= Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Mechanical Outline DRAIN GATE SOURCE Datasheet# MSC0299A MSAEZ50N10A MSAFZ50N10A .. Electrical Parameters @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) SYMBOL BVDSS ∆BVDSS/∆TJ VGS(th) IGSS IDSS RDS(on) CONDITIONS...