Microsemi 2N3055
NPN POWER SILICON TRANSISTOR
| Part No. | 2N3055 |
|---|---|
| Datasheet | 2N3055 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC Value 70 100 7.0 7.0 15 6.0 117 -65 to +200 Max. 1.5 Units Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 34.2 mW/0C for TA > +250C 2) Derate linearly @ 668 mW/0C for TC > +250C 0 TO-3* (TO-204AA) *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
Characteristics Symbol V(BR)CEO V(BR)CER V(BR)CEX ICEO ICEX IEBO Min. 70 80 90 1.0 1.0 1.0 Max. Unit Vdc Vdc Vdc mAdc mAdc mAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBE = 100Ω Collector-Emitter Breakdown Voltage VBE = -1.5 Vdc, IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collecto...