APTC60DHM24T3G Datasheet | Microsemi

Features 22 19 7 - 23 8 Q4 CR2 29 15 32 16 - - - - R1 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 28 27 26 25 29 30 23 22 20 19 18 16 15 Benefits - Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Ro HS pliant 31 32 2 3 4 7 8 10 11 12 14 13 - - - - - All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23… Absolute maximum ratings Symbol VDSS ID Parameter Drain - Source Breakdown Voltage Continuous Drain Current Tc = 25°C Tc = 80°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A V mΩ W A m J August, 2009 1-7 APTC60DHM24T3G - Rev 1 IDM Pulsed Drain current VGS Gate - Source Voltage RDSon Drain - Source ON Resistance .. PD Maximum Power Dissipation IAR Avalanche current (repetitive and non repetitive) EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on .microsemi. .microsemi. All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics...