APTC60DHM35T3G
APTC60DHM35T3G is Asymmetrical Bridge Super Junction MOSFET Power Module manufactured by Microsemi.
Features
- - Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged Kelvin source for easy drive Very low stray inductance
- Symmetrical design Internal thermistor for temperature monitoring High level of integration
22 19
8 Q4
CR2
- -
- -
29 15
32 16
R1
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Benefits
- Outstanding performance at high frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Solderable terminals both for power and signal for easy PCB mounting
- Low profile
- Ro HS pliant
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol VDSS ID Parameter Drain
- Source Breakdown Voltage Continuous Drain Current Tc = 25°C Tc = 80°C Max ratings 600 72 54 200 ±20 35 416 20 1 1800 Unit V A V mΩ W A m J
August, 2009 1-7 APTC60DHM35T3G
- Rev...
