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LX5516 - InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module

General Description

The LX5516 is a power amplifier module optimized for WLAN applications in the 2.4-2.5GHz frequency range.

The PAM is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with on-chip active bias and 50 Ω impedance matched at both input and output.

Key Features

  • Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3.3V Supply Quiescent Current ~80mA Power Gain ~ 29 dB Pout=~+18dBm for 2.5% EVM, OFDM 64QAM/54Mbps Total Current ~130mA for Pout= +18dBm 50Ω Input/Output Matching On-chip Output Power Detector Small Footprint: 2x2mm2 Ultra Low Profile:0.46mm.

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www.DataSheet4U.com TM ® LX5516 InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module P RODUCTION D AT A S HEET W WW . Microsemi . CO M DESCRIPTION The LX5516 is a power amplifier module optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PAM is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with on-chip active bias and 50 Ω impedance matched at both input and output. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V, it delivers 29dB power gain between 2.4-2.5GHz, at a low quiescent current of 80mA. For 18dBm OFDM output power (64QAM, 54Mbps), the PAM provides a low EVM (Error-Vector Magnitude) of 2.5%, and consumes 130mA total DC current.