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MM002-10

Manufacturer: Microsemi (now Microchip Technology)
MM002-10 datasheet preview

Datasheet Details

Part number MM002-10
Datasheet MM002-10_MicrosemiCorporation.pdf
File Size 97.44 KB
Manufacturer Microsemi (now Microchip Technology)
Description 3 PHASE DIODE BRIDGE
MM002-10 page 2

MM002-10 Overview

SYMBOL CONDITIONS MIN TYP. IR(rec)= 0.25A µsec nsec Junction Capacitance Cj VR= 10 Vdc; Vsig= 50 mV(pp) ,max pF Notes (1) Pulse test, t ≤ 300 µs, duty cycle δ ≤.

MM002-10 Key Features

  • Available in standard switching (low VF) as MM002-xx or ultrafast switching as MM002-xxU
  • pact and rugged construction offering weight and space savings
  • Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “ T”suffix to part num
  • HPM (Hermetic Power Module)
  • Isolation voltage capability (in reference to the base) in excess of 3kV
  • Very low thermal resistance
  • Thermally matched construction provides excellent temperature and power cycling capability
  • Additional voltage ratings or terminations available upon request
Microsemi (now Microchip Technology) logo - Manufacturer

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MM002-10 Distributor

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