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MM018-06L

Manufacturer: Microsemi (now Microchip Technology)
MM018-06L datasheet preview

Datasheet Details

Part number MM018-06L
Datasheet MM018-06L_MicrosemiCorporation.pdf
File Size 116.51 KB
Manufacturer Microsemi (now Microchip Technology)
Description 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
MM018-06L page 2 MM018-06L page 3

MM018-06L Overview

MAX UNIT V 4 5.5 Gate-to-Emitter Leakage Current IGES Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) ICES VCE(sat) TJ = 25° C TJ = 125° C TJ.

MM018-06L Key Features

  • Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF
  • pact and rugged construction offering weight and space savings
  • Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “ T”suffix to part num
  • HPM (Hermetic Power Module)
  • Isolation voltage capability (in reference to the base) in excess of 3kV
  • Very low thermal resistance
  • Thermally matched construction provides excellent temperature and power cycling capability
  • Additional voltage ratings or terminations available upon request PART NUMBER Collector-to-Emitter Breakdown Voltage (Ga
  • continued
Microsemi (now Microchip Technology) logo - Manufacturer

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MM018-06L Distributor

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