MS1510
MS1510 is RF & MICROWAVE TRANSISTORS manufactured by Microsemi.
DESCRIPTION
KEY FEATURES
W W W . Microsemi .
The MS1510 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for broadband applications in the 450
- 512 MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR at rated operating conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://.microsemi.
470 MHz !" 12.5 Volts !" Efficiency 55% !" mon Emitter !" POUT = 38 W Min. !" GP = 5.8 d B Gain !"
APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS
UHF Mobile !" Applications
Symbol VCBO VCEO VEBO IC PDISS TJ TSTG
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value 36 16 4.0 8.0 117 +200 -65 to +150
Unit V V V A W °C °C
.500 6LFL (M111) EPOXY SEALED
THERMAL DATA
4 1
1.5 °C/W
RTH(j-c)
Junction-Case Thermal Resistance
2 3
Copyright 2000 MSC1627.PDF 2000-12-03
Microsemi
RF Products Division 140 merce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
RF PRODUCTS DIVISION
RF & MICROWAVE TRANSISTORS
P RODUCT P REVIEW
W W W . Microsemi .
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Symbol BVCES BVCEO BVEBO ICES h FE IC = 15 m A IC = 50 m A IE = 5 m A VCB =12.5 V VCE = 5 V
Test Conditions VBE = 0 V IB = 0 m A IC = 0 m A IE = 0 m A IC = 1 A
Min. 36 16 4.0 20
MS1504 Typ.
Max.
Units V V V m A
5 200
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Symbol POUT GP COB f = 470 MHz f = 470 MHz f = 1 MHz
Test Conditions PIN = 10.0 W PIN = 10.0 W VCB = 12.5 V VCC = 12.5 V VCC = 12.5...
