MS1578 Datasheet | Microsemi

Features GOLD METALLIZATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY POUT = 150 W PEP INTERNAL INPUT/OUTPUT MATCHING MON EMITTER CONFIGURATION 8.0d B GAIN @ 900 MHz MAX IMD -28d Bc @ 150 W PEP 5:1 VSWR CAPABILITY @ RATED CONDITIONS 3 d B OVERDRIVE CAPABILITY - DESCRIPTION : THE MS1578 IS A GOLD METALLIZED, EPITAXIAL SILICON, NPN PLANAR TRANSISTOR DESIGNED FOR HIGH LINEARITY CLASS AB OPERATION. DIFFUSED EMITTER BALLAST RESISTORS PROVIDE MAXIMUM RUGGEDNESS AND RELIABILITY FOR 900 MHz CELLULAR BASE STATION APPLICATIONS. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC PDISS TJ T STG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 28 65 3.5 25 300 +200 - 65 to + 150 Unit V V V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 0.60 ° C/W MSC0890.PDF ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° C) STATIC Symbol BVCBO BVCER BVCEO BVEBO IC = 50 m A IC = 100 m A IC = 100 m A IE = 10 m A VCE = 30 V ICEO h FE VCE = 5 V Tested per side Test Conditions Min. VBE = 0 V RBE = 75 Ω IB = 0 m A IC = 0 m A VBE = 0 V IC = 6 A 60 35 28 3.5 --25 Value Typ. ----------- Max. ------10 120 Unit V V V m A DYNAMIC Symbol GP- V C- IMD LOAD- MISMATCH VCC = 26 Vdc Test Conditions Min. POUT = 150 W PEP ICQ = 2 x 200 m A 8.5 30 --VCC = 26 Vdc POUT = 150 W PEP ICQ = 2 x 200 m A VCC = 26 Vdc POUT = 150 W PEP ICQ = 2 x 200 m A VCC = 26 Vdc POUT = 150 W PEP ICQ = 2 x 200 m A VSWR = 5:1 @ all phase angles f2 = 900.1 MHz Value Typ. 9.0 ---32 Max. -----28 Unit d B % d Bc - Note: f1 = 900.0...