Description
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+9.0 VDC 4.5 A +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1
(1) Channel temperature affects a dev
Features
- X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing
Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The device.
XP1006-FA Datasheet
