XP1006-FA Datasheet GaAs MMIC Power Amplifier

Manufacturer: Mimix Broadband

XP1006-FA gaas mmic power amplifier by Mimix Broadband - Datasheet Preview

Datasheet Details

Part number	XP1006-FA
Manufacturer	Mimix Broadband
File Size	254.18 KB
Description	GaAs MMIC Power Amplifier
Download	XP1006-FA Download (PDF)

General Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 4.5 A +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF.

It is recommended to keep channel temperature as low as possible for maximum life.

Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=5%,TA=25ºC) Parameter Frequency Range (f ) Input Return Loss (S11)1 Output Return Loss (S22)1 Large Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12)1 Saturated Output Power (PSAT) Power Added Efficiency (PAE) Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg) Supply Current (Id) (Vd=8.0V, Vg=-0.6V Typical) (1) Measured on-wafer pre-packaging.

Overview

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin August 2006 - Rev 16-Aug-06.

Key Features

X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The device.

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