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XP1006 Datasheet GaAs MMIC Power Amplifier

Manufacturer: Mimix Broadband

Datasheet Details

Part number XP1006
Manufacturer Mimix Broadband
File Size 268.85 KB
Description GaAs MMIC Power Amplifier
Download XP1006 Download (PDF)

General Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 4.5 A +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF.

It is recommended to keep channel temperature as low as possible for maximum life.

Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=10%,TA=25ºC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Large Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Saturated Output Power (PSAT) Power Added Efficiency (PAE) Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vgg) Supply Current (Id) (Vd=8.0V, Vgg=-5.0V Typical) Units GHz dB dB dB dB dB dBm % VDC VDC A Min.

Overview

8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06.

Key Features

  • X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology,.