XP1006 - GaAs MMIC Power Amplifier

Product Overview

Mimix Broadband

Datasheet Details

Part number	XP1006
Manufacturer	Mimix Broadband
File Size	268.85 KB
Description	GaAs MMIC Power Amplifier
Datasheet	XP1006 Datasheet
Additional preview pages of the XP1006 datasheet.

Product details

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 4.5 A +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF.It is recommended to keep channel temperature as low as possible for maximum life.Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=10%,TA=25ºC) Parameter Frequency Range (f )

Features

X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology,.

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Published: May 25, 2007 |