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XP1024-BD - GaAs MMIC Power Amplifier

Datasheet Summary

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 1700 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF TAble4 MTTF Table 4 (4) Channel temperature affects a dev

Features

  • Balanced Design Provides Good Output Match On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. The device also includes Lange couplers to achieve good output return loss and an on-chip.

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Datasheet Details

Part number XP1024-BD
Manufacturer Mimix Broadband
File Size 241.26 KB
Description GaAs MMIC Power Amplifier
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26.0-31.0 GHz GaAs MMIC Power Amplifier April 2007 - Rev 17-Apr-07 P1024-BD Chip Device Layout XP1024-BD Features Balanced Design Provides Good Output Match On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. The device also includes Lange couplers to achieve good output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband’s 0.
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