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XP1025-BD - GaAs MMIC Power Amplifier

Datasheet Summary

Description

Mimix Broadband's three stage 28.0-31.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +30.0 dBm saturated output power.

Features

  • Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XP1025-BD General.

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Datasheet Details

Part number XP1025-BD
Manufacturer Mimix Broadband
File Size 296.41 KB
Description GaAs MMIC Power Amplifier
Datasheet download datasheet XP1025-BD Datasheet
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28.0-31.0 GHz GaAs MMIC Power Amplifier March 2007 - Rev 05-Mar-07 P1025-BD Chip Device Layout Features Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XP1025-BD General Description Mimix Broadband's three stage 28.0-31.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +30.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
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