XP1028-BD Datasheet | Mimix Broadband

Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 d B Small Signal Gain +29 d Bm P1d B pression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband's three stage balanced 43.5 - 46.5 GHz Ga As MMIC power amplifier has a small signal gain of 14.0 d B with a +29.0 d Bm P1d B output pression point. The device also includes Lange couplers to achieve good input and output return loss. This MMIC uses Mimix Broadband’s 0.15 µm Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with .. backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SAT and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 2360 m A +0.3 VDC +23 d Bm -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is remended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 o C) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Output Power for 1d B pression (P1d B) 2 Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id) (Vd=5.0V, Vg=-0.5V Typical) (2) Measured using constant current. Units GHz d B d B d B d B d B d Bm VDC VDC m A Min. 43.5 -1.0 - Typ. 25.0 25.0 14.0 +/-1.0 45.0 +29.0 +5.0 -0.5 1440 Max. 46.5 +5.5 0.0 2160 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax:...