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XR1002-BD - GaAs MMIC Receiver

General Description

R1002 Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 300 mA +0.3 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table3 MTTF Table 3 www.DataSheet4U.com (

Key Features

  • Fundamental High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input Third Order Intercept (IIP3) 13.0 dB Conversion Gain 3.0 dB Noise Figure 25.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s 17.65-33.65 GHz GaAs MMIC receiver has a 12.0 dB gain control range, a noise figure of 3.0 dB and 25.0 dB image rejection across the band. This device is a three stage LNA followed by a single transistor "Tee".

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Datasheet Details

Part number XR1002-BD
Manufacturer Mimix Broadband
File Size 459.28 KB
Description GaAs MMIC Receiver
Datasheet download datasheet XR1002-BD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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17.65-33.65 GHz GaAs MMIC Receiver April 2007 - Rev 05-Apr-07 Features Fundamental High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input Third Order Intercept (IIP3) 13.0 dB Conversion Gain 3.0 dB Noise Figure 25.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s 17.65-33.65 GHz GaAs MMIC receiver has a 12.0 dB gain control range, a noise figure of 3.0 dB and 25.0 dB image rejection across the band. This device is a three stage LNA followed by a single transistor "Tee" attenuator and an image reject fundamental resistive HEMT mixer.