MGF4941AL Datasheet | Mitsubishi Electric

18/May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. Outline Drawing Features Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION L to K band low noise amplifiers QUALITY GRADE GG GD-32 REMENDED BIAS CONDITIONS VDS=2V , ID=10mA MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric ORDERING INFORMATION Tape & reel 4000pcs./reel Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the...