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MGF4941AL Datasheet SUPER LOW NOISE InGaAs HEMT

Manufacturer: Mitsubishi Electric

Overview: 18/May/2007 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs.

General Description

The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers.

Outline Drawing

Key Features

  • Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ. ) High associated gain @ f=12GHz Gs = 13.5dB (Typ. ) Fig.1.