MGFS36E2527 Datasheet | Mitsubishi Electric

DESCRIPTION MGFS36E2527 is Ga As RF amplifier designed for Wi MAX CPE. FEATURES - - - - - - - - - In Ga P HBT Device 6V Operation 27d Bm Linear Output Power 33d B Linear Gain Integrated Output Power Detector Integrated 1-bit 19d B Step Attenuator 50ohms Matched Surface Mount Package Ro HS pliant Package 1 2 3 10 9 8 7 6 (X-ray Top View) APPLICATION IEEE802.16-2004, IEEE802.16e-2005 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc Vc Vc Vc Pout Po_det GND Vref Vcont DIM IN mm FUNCTIONAL BLOCK DIAGRAM Pin Vcont (0/3V) Vc Pout Bias Circuit Vref Po_det ELECTRICAL CHARACTERISTICS(Ta=25°C) Symbol Parameter Test Conditions- Min 2.5 Vc=6V, Vref=2.85V Pout=27d Bm 64QAM OFDM Modulation Duty Cycle < 10% Vcont=3V Vc=6V, Vref=0V Limits Typ 33 10 2.5 -10 1.5 19 10 Unit Max 2.7 GHz d B % % d B V d B µA f Frequency Gp Gain Efficiency ηt EVM EVM Input Return Loss ρin Vdet Power Detector Voltage ATT Control Gain Step Ileak Leakage Current - NOTE : Ta=25°C, Zin=Zout=50Ω Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. (1/3) October-2006 MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. 2.5-2.7GHz HBT HYBRID IC PERFORMANCE DATA Output Power vs. Input Power 30 Vc=6V Vref=2.85V Vcont=0V Output Power (d Bm) 25 14 Efficiency (%) 12 10 8 6 2.5GHz 2.6GHz 2.7GHz 10 -20 -15 -10 Input Power (d Bm) -5 0 4 2 0 10 15 20 Output Power (d Bm) 25 30 2.5GHz 2.6GHz 2.7GHz Efficiency vs. Output Power 20 18 16 Vc=6V Vref=2.85V...