MGFS36E2527 Description
MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE.
MGFS36E2527 Key Features
- InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-b
MGFS36E2527 is HBT HYBRID IC manufactured by Mitsubishi Electric.
| Part Number | Description |
|---|---|
| MGFS45V2527A | power GaAs FET |
| MGFS52B2122 | BAND 100W GsAs FET |
| MGFS52BN2122A | power GaAs FET |
| MGF0912A | L & S BAND GaAs FET |
| MGF0913A | L & S BAND GaAs FET |
MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE.