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MGFS52BN2122A

Manufacturer: Mitsubishi Electric

MGFS52BN2122A datasheet by Mitsubishi Electric.

MGFS52BN2122A datasheet preview

MGFS52BN2122A Datasheet Details

Part number MGFS52BN2122A
Datasheet MGFS52BN2122A_MitsubishiElectric.pdf
File Size 444.14 KB
Manufacturer Mitsubishi Electric
Description power GaAs FET
MGFS52BN2122A page 2 MGFS52BN2122A page 3

MGFS52BN2122A Overview

The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFS52BN2122A Key Features

  • High output power
  • High power gain
  • High power added efficiency
  • 2.1-2.2GHz band power amplifier for W-CDMA Base Station
  • VDS=12V
  • ID=4.0A
  • RG=5ohm for each gate
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