MGFS52BN2122A Datasheet | Mitsubishi Electric

DESCRIPTION The MGFS52BN2122A is a 160W push-pull type Ga As power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Push-pull configuration - High output power Pout=160W (TYP.) @f=2.17GHz - High power gain GLP=12.0d B (TYP.) @f=2.17GHz - High power added efficiency P.A.E.=48% (TYP.) @f=2.17GHz APPLICATION - 2.1-2.2GHz band power amplifier for W-CDMA Base Station QUALITY - IG OUTLINE REMENDED BIAS CONDITIONS - VDS=12V - ID=4.0A - RG=5ohm for each gate Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -20 VGSO Gate to source breakdown voltage -10 - 1 Total power dissipation Tch Cannel temperature Tstg Storage temperature - 1 : Tc=25C -65 to +175 Unit W C...