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MGFS52BN2122A - power GaAs FET

General Description

The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1

2.2GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Push-pull configuration.
  • High output power Pout=160W (TYP. ) @f=2.17GHz.
  • High power gain GLP=12.0dB (TYP. ) @f=2.17GHz.
  • High power added efficiency P. A. E. =48% (TYP. ) @f=2.17GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 – 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Push-pull configuration  High output power Pout=160W (TYP.) @f=2.17GHz  High power gain GLP=12.0dB (TYP.) @f=2.17GHz  High power added efficiency P.A.E.=48% (TYP.) @f=2.17GHz APPLICATION  2.1-2.2GHz band power amplifier for W-CDMA Base Station QUALITY  IG OUTLINE RECOMMENDED BIAS CONDITIONS  VDS=12V  ID=4.