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MGFS45V2527A - power GaAs FET

General Description

The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=32W (TYP. ) @f=2.5 - 2.7GHz.
  • High power gain GLP=12.0dB (TYP. ) @f=2.5 - 2.7GHz.
  • High power added efficiency P. A. E. =45% (TYP. ) @f=2.5 - 2.7GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=34.5dBm S. C. L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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0.1±0.05 2.4±0.2 (0.094±0.008) < L/S band internally matched power GaAs FET > MGFS45V2527A 2.5 – 2.7 GHz BAND / 32W DESCRIPTION The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=32W (TYP.) @f=2.5 - 2.7GHz  High power gain GLP=12.0dB (TYP.) @f=2.5 - 2.7GHz  High power added efficiency P.A.E.=45% (TYP.) @f=2.5 - 2.7GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L APPLICATION  item 01 : 2.5 - 2.7 GHz band power amplifier  item 51 : 2.5 - 2.7 GHz band digital radio communication OUTLINE DRAWING Unit : millimeters (inches) 24.