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MGFS45V2527A Datasheet Power Gaas Fet

Manufacturer: Mitsubishi Electric

Overview: 0.1±0.05 2.4±0.2 (0.094±0.008) < L/S band internally matched power GaAs FET > MGFS45V2527A 2.5 – 2.

General Description

The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=32W (TYP. ) @f=2.5 - 2.7GHz.
  • High power gain GLP=12.0dB (TYP. ) @f=2.5 - 2.7GHz.
  • High power added efficiency P. A. E. =45% (TYP. ) @f=2.5 - 2.7GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=34.5dBm S. C. L.

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