MGFS45V2527A
MGFS45V2527A is power GaAs FET manufactured by Mitsubishi Electric.
DESCRIPTION
The MGFS45V2527A is an internally impedance-matched Ga As power FET especially designed for use in 2.5
- 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system
- High output power
P1d B=32W (TYP.) @f=2.5
- 2.7GHz
- High power gain
GLP=12.0d B (TYP.) @f=2.5
- 2.7GHz
- High power added efficiency
P.A.E.=45% (TYP.) @f=2.5
- 2.7GHz
- Low distortion [item -51]
IM3=-45d Bc (TYP.) @Po=34.5d Bm S.C.L
APPLICATION
- item 01 : 2.5
- 2.7 GHz band power amplifier
- item 51 : 2.5
- 2.7 GHz band digital radio munication
OUTLINE DRAWING
Unit : millimeters (inches)
24.0±0.3(0.945±0.012)
1 0.6± 0.15 (0.024±0.006)
2.0MIN. (0.079MIN.)
17.4±0.2 (0.685±0.008)
8.0±0.2 (0.315±0.008)
2.0MIN. (0.079MIN.)
3 20.4±0.2(0.803±0.008)
15.8(0.622)...
