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M2V64S20DTP

Manufacturer: Mitsubishi Electric
M2V64S20DTP datasheet preview

Datasheet Details

Part number M2V64S20DTP
Datasheet M2V64S20DTP_MitsubishiElectricSemiconductor.pdf
File Size 427.75 KB
Manufacturer Mitsubishi Electric
Description 64M Synchronous DRAM
M2V64S20DTP page 2 M2V64S20DTP page 3

M2V64S20DTP Overview

All inputs and outputs are referenced to the rising edge of CLK.

M2V64S20DTP Key Features

  • Single 3.3v±0.3V power supply
  • Max. Clock frequency -6:133MHz<3-3-3>, -7:100MHz<2-2-2>, -8:100MHz<3-2-2>
  • Fully Synchronous operation referenced to clock rising edge
  • 4 bank operation controlled by BA0 & BA1 (Bank Address)
  • /CAS latency- 2 and 3 (programmable)
  • Burst length- 1, 2, 4, 8 and full page (programmable)
  • Burst type- sequential and interleave (programmable)
  • Byte Control- DQM L and DQMU for M2V64S40DTP
  • Random column access
  • Auto p recharge and All bank precharge controlled by A10
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M2V64S20DTP Distributor

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