| Part number | M5M4V16169DTP |
|---|---|
| Download | M5M4V16169DTP Datasheet (PDF) |
| File Size | 737.49 KB |
| Manufacturer | Mitsubishi Electric |
| Description | 16M (1M-WORD BY 16-BIT) CACHED DRAM |
|
|
| Part Number | Description |
|---|---|
| M5M4V16169DTP-10 | 16M (1M-WORD BY 16-BIT) CACHED DRAM |
| M5M4V16169DTP-15 | 16M (1M-WORD BY 16-BIT) CACHED DRAM |
| M5M4V16169DTP-7 | 16M (1M-WORD BY 16-BIT) CACHED DRAM |
| M5M4V16169DTP-8 | 16M (1M-WORD BY 16-BIT) CACHED DRAM |
| M5M4V16169DRT-10 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
The block data transfer between the DRAM and the data transfer buffers (RB1/RB2/WB1/WB2) is performed in one instruction cycle, a fundamental advantage over a conventional DRAM/SRAM cache. The RAM is fabricated with a high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low cost are essential. The use of quadruple-layer polysilicon process bined...
