Datasheet4U Logo Datasheet4U.com

M5M4V4S40CTP-12 - 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM

Download the M5M4V4S40CTP-12 datasheet PDF. This datasheet also covers the M5M variant, as both devices belong to the same 4m (2-bank x 131072-word x 16-bit) synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

The M5M4V4S40CTP is a 2-bank x 131,072-word x 16-bit Synchronous DRAM, with LVTTL interface.

All inputs and outputs are referenced to the rising edge of CLK.

The M5M4V4S40CTP achieves very high speed data rates up to 83MHz, and is suitable for main memory or graphic memory in computer systems.

Key Features

  • - Single 3.3v±0.3v power supply - Clock frequency 83MHz / 67MHz - Fully synchronous operation referenced to clock rising edge - Dual bank operation controlled by BA(Bank Address) - /CAS latency- 1/2/3 (programmable) - Burst length- 1/2/4/8/FP (programmable) - Sequential and interleave burst (programmable) - Byte control by DQMU and DQML - Random column access - Auto precharge / All bank precharge controlled by A8 - Auto and self refresh - 1024 refresh cycles /16.4ms CLK - LVTTL Interface CKE - 4.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M-4V4.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
M5M417800AJ Fast Page Mode 16M-Bit DRAM Mitsubishi Electric
M5M417800CJ Fast Page Mode 16M-Bit DRAM Mitsubishi Electric
M5M417800DJ Fast Page Mode 16M-Bit DRAM Mitsubishi Electric
M5M417805CJ Hyper Page Mode 16M-Bit DRAM Mitsubishi Electric
M5M417805DJ EDO Mode 16M-Bit DRAM Mitsubishi Electric

Other Datasheets by Mitsubishi Electric

Part Number Description
M5M4V4S40CTP-15 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
M5M4V4265CJ EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M4V4265CJ-5 EDO 4M-Bit DRAM
M5M4V4265CJ-5S EDO 4M-Bit DRAM
M5M4V4265CJ-6 EDO 4M-Bit DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SDRAM (Rev. 0.3) MITSUBISHI LSIs Feb ‘97 Preliminary M5M4V4S40CTP-12, -15 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION The M5M4V4S40CTP is a 2-bank x 131,072-word x 16-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V4S40CTP achieves very high speed data rates up to 83MHz, and is suitable for main memory or graphic memory in computer systems.