M68742 Datasheet | Mitsubishi Electric

MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 903-905MHz, 1.8W, FM PORTABLE RADIO OUTLINE DRAWING 42±0.5 37 30 2-R1.5 +0.2 - 0.5 +0.8 0 Dimensions in mm BLOCK DIAGRAM 4 5 6±1 φ0.45 ±0.15 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN 9.6±1 14.7±1 27.4±1 32.4±1 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50Ω f=903-905MHz, ZG=ZL=50Ω f=903-905MHz, ZG=ZL=50Ω f=903-905MHz, ZG=ZL=50Ω Ratings 13 5.5 10 5 -30 to +100 -40 to +100 Unit V V m W W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO 2f O ρin ηT Frequency range Output power 2nd. harmonic Input VSWR Total efficiency Stability Load VSWR tolerance Parameter Test conditions Limits Min 903 1.8 Max 905 -30 4 30 No parasitic oscillation No degradation or destroy Unit MHz W d Bc % - VDD=6V, VGG=5V, Pin=1m W, ZG=ZL=50Ω PO=1.8W(VGG=Adjust), VDD=6V, Pin=1m W, ZG=ZL=50Ω ZG=ZL=50Ω, VDD=4.5-9.3V, Load VSWR <4:1 VDD=13V, Pin=1m W, PO=1.8W (VGG Adjust), ZL=20:1 Note. Above parameters, ratings, limits and test conditions are subject to change. Nov....