The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MITSUBISHI RF POWER MODULE
M68742
SILICON MOS FET POWER AMPLIFIER, 903-905MHz, 1.8W, FM PORTABLE RADIO
OUTLINE DRAWING
42±0.5 37 30 2-R1.5 +0.2 - 0.5 +0.8 0
Dimensions in mm
BLOCK DIAGRAM
2
3
1
4 5
1
2
3
4
5
6±1
φ0.45 ±0.15 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
9.6±1 14.7±1 27.4±1 32.4±1
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50Ω f=903-905MHz, ZG=ZL=50Ω f=903-905MHz, ZG=ZL=50Ω f=903-905MHz, ZG=ZL=50Ω Ratings 13 5.5 10 5 -30 to +100 -40 to +100 Unit V V mW W °C °C
Note. Above parameters are guaranteed independently.