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MITSUBISHI RF POWER MODULE
M68742
SILICON MOS FET POWER AMPLIFIER, 903-905MHz, 1.8W, FM PORTABLE RADIO
OUTLINE DRAWING
42±0.5 37 30 2-R1.5 +0.2 - 0.5 +0.8 0
Dimensions in mm
BLOCK DIAGRAM
2
3
1
4 5
1
2
3
4
5
6±1
φ0.45 ±0.15 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
9.6±1 14.7±1 27.4±1 32.4±1
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50Ω f=903-905MHz, ZG=ZL=50Ω f=903-905MHz, ZG=ZL=50Ω f=903-905MHz, ZG=ZL=50Ω Ratings 13 5.5 10 5 -30 to +100 -40 to +100 Unit V V mW W °C °C
Note. Above parameters are guaranteed independently.