M68745L Datasheet | Mitsubishi Electric

MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO OUTLINE DRAWING 45 42 2-R1.5 Dimensions in mm BLOCK DIAGRAM 4 5 18 (36.5) 8.5 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN 1.5 6.4 32.2 H50 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω Ratings 9 5.5 6 6 -30 to +100 -40 to +100 Unit V V m W W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO 2f O ρin ηT Frequency range Output power 2nd. harmonic Input VSWR Total efficiency Stability Load VSWR tolerance Parameter Test conditions Limits Min 806 3.8 Max 870 -30 4 30 No parasitic oscillation No degradation or destroy Unit MHz W d Bc VDD=7.2V, VGG=5V, Pin=1m W, ZG=ZL=50Ω PO=3.8W(VGG=Adjust), VDD=7.2V, Pin=1m W, ZG=ZL=50Ω ZG=ZL=50Ω, VDD=5-9.3V, Load VSWR <4:1 VDD=9V, Pin=1m W, PO=3.8W (VGG Adjust), ZL=20:1 % Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 6 5 4 3 2 PO 60 50 40 30 20 0.10 1 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 10.00 100 f=806MHz PO VDD=7.2V VGG=5V ηT ZG=ZL=50Ω 1.00 10 ηT VDD=7.2V ρin 1 VGG=5V 10 Pin=1m W ZG=ZL=50 Ω 0 0 760 780 800 820 840 860 880 900 FREQUENCY f (MHz) 0.01 -30 -25 -20 -15 -10 -5 0 10 INPUT POWER Pin (d Bm) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 10.00 100 f=870MHz PO VDD=7.2V ηT VGG=5V ZG=ZL=50Ω 1.00 10 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE...