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M68745H - SILICON MOS FET POWER AMPLIFIER

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MITSUBISHI RF POWER MODULE M68745H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO OUTLINE DRAWING 45 42 2-R1.5 Dimensions in mm BLOCK DIAGRAM 2 3 1 4 5 5 18 (36.5) 5 8.5 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN 35 1.5 6.4 32.2 1.5 H50 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω Ratings 9 5.5 6 6 -30 to +100 -40 to +100 Unit V V mW W °C °C Note. Above parameters are guaranteed independently.