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MITSUBISHI RF POWER MODULE
M68745H
SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO
OUTLINE DRAWING
45 42 2-R1.5
Dimensions in mm
BLOCK DIAGRAM
2
3
1
4 5
5
18 (36.5)
5
8.5 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
35
1.5 6.4 32.2
1.5
H50
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω Ratings 9 5.5 6 6 -30 to +100 -40 to +100 Unit V V mW W °C °C
Note. Above parameters are guaranteed independently.
M68745H Datasheet
