M6MGT160S4BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP

Mitsubishi Electric

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M6MGT160S4BVP cmos 3.3v-only flash memory & cmos sram stacked-mcp by Mitsubishi Electric - Datasheet Preview

Datasheet Details

Part number	M6MGT160S4BVP
Manufacturer	Mitsubishi Electric
File Size	257.23 KB
Description	CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
Datasheet	M6MGT160S4BVP Datasheet

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MITSUBISHI LSIs M6MGB/T160S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi • Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I). SRAM 85ns (Max.) • Supply voltage Vcc=2.7 ~ 3.6V 16M-bits Flash memory is a 2097152 bytes /1048576 words, • Ambient temperature 3.3V-only, and high performance non-volatile memory W version Ta=-20 ~ 85°C fabricated by CMOS technology for the peripheral circuit • Package : 48-pin TSOP (Type-I) , 0.