M6MGT160S4BVP Overview
FEATURES The MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I). SRAM 85ns (Max.) Supply voltage Vcc=2.7 ~ 3.6V 16M-bits Flash memory is a 2097152 bytes /1048576 words, Ambient temperature 3.3V-only, and high performance non-volatile memory W version Ta=-20 ~ 85°C fabricated by...
M6MGT160S4BVP Key Features
- Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 4M-bits Static RAM in
- Supply voltage Vcc=2.7 ~ 3.6V 16M-bits Flash memory is a 2097152 bytes /1048576 words
- Ambient temperature 3.3V-only, and high performance non-volatile memory W version Ta=-20 ~ 85°C fabricated by CMOS techn
- Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch and DINOR(DIvided bit-line NOR) architecture for the memory cell. 4M-b