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M6MGT166S4BWG - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP

General Description

The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 72-pin S-CSP.

Key Features

  • Access time Flash Memory 90ns (Max. ) SRAM 85ns (Max. ).
  • Supply voltage Vcc=2.7 ~ 3.6V.
  • Ambient temperature W version Ta=-20 ~ 85°C.
  • Package : 72-pin S-CSP , 0.8mm ball pitch.

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MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 72-pin S-CSP. 16M-bits Flash memory is a 1,048,576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell. 4M-bits SRAM is a 262,144words unsynchronous SRAM fabricated by silicon-gate CMOS technology. M6MGB/T166S4BWG is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .