M6MGT166S2BWG - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP

Description

The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 2M-bits Static RAM in a 72-pin S-CSP.

Features

Access time Flash Memory 90ns (Max. ) SRAM 85ns (Max. ).
Supply voltage Vcc=2.7 ~ 3.6V.
Ambient temperature I version Ta=-40 ~ 85°C.
Package : 72-pin S-CSP , 0.8mm ball pitch.

Mitsubishi

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Datasheet Details

Part number	M6MGT166S2BWG
Manufacturer	Mitsubishi
File Size	253.20 KB
Description	CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
Datasheet	M6MGT166S2BWG Datasheet
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Full PDF Text Transcription

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MITSUBISHI LSIs M6MGB/T166S2BWG 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 2M-bits Static RAM in a 72-pin S-CSP. 16M-bits Flash memory is a 1,048,576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell. 2M-bits SRAM is a 131,072words unsynchronous SRAM fabricated by silicon-gate CMOS technology. M6MGB/T166S2BWG is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .

Published: May 6, 2005 |