M6MGT162S4BVP Overview
FEATURES The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I). SRAM 85ns (Max.) Supply voltage Vcc=2.7 ~ 3.6V 16M-bits Flash memory is a 1048576 words, 3.3V-only, and Ambient temperature high performance non-volatile memory fabricated by CMOS W version Ta=-20 ~ 85°C technology...
M6MGT162S4BVP Key Features
- Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 4M-bits Static RAM in
- Supply voltage Vcc=2.7 ~ 3.6V 16M-bits Flash memory is a 1048576 words, 3.3V-only, and
- Ambient temperature high performance non-volatile memory fabricated by CMOS W version Ta=-20 ~ 85°C technology for the p
- Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch bit-line NOR) architecture for the memory cell. 4M-bits SRAM is a 2621