Datasheet4U Logo Datasheet4U.com

MGFC36V3436 - 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

Description

The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

21.0 +/-0.3 2 N I.

Features

  • Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP. ) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP. ) @ f=3.4 - 3.6GHz High power added efficiency P. A. E. = 32 % (TYP. ) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Typ. ) @Po=25dBm S. C. L. (1) 0.6 +/-0.15 (2) (2) R-1.6 3 . 1 1 (3) 10.7 2 . 0 / + 1 . 0 6 . 2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MGFC39V5867 C band internally matched power GaAs FET Mitsubishi Electric
MGFC40V3742 C band internally matched power GaAs FET Mitsubishi Electric
MGFC40V4450 C band internally matched power GaAs FET Mitsubishi Electric
MGFC40V5964 C band internally matched power GaAs FET Mitsubishi Electric
MGFC41V6472 C band internally matched power GaAs FET Mitsubishi Electric

Other Datasheets by Mitsubishi Electric

Part Number Description
MGFC36V3742A C band internally matched power GaAs FET
MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V5258 C band internally matched power GaAs FET
MGFC36V5964A C band internally matched power GaAs FET
MGFC36V6472A C band internally matched power GaAs FET

Full PDF Text Transcription

Click to expand full text
MITSUBISHI SEMICONDUCTOR MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 21.0 +/-0.3 2 N I. 0 M 2 / + 9 . 2 1 N I M 2 OUTLINE DRAWING Unit : millimeters FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Typ.) @Po=25dBm S.C.L. (1) 0.6 +/-0.15 (2) (2) R-1.6 3 . 1 1 (3) 10.7 2 . 0 / + 1 . 0 6 . 2 APPLICATION item 01 : 3.4 - 3.
Published: |