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MGFC36V3436

Manufacturer: Mitsubishi Electric
MGFC36V3436 datasheet preview

Datasheet Details

Part number MGFC36V3436
Datasheet MGFC36V3436_MitsubishiElectricSemiconductor.pdf
File Size 131.81 KB
Manufacturer Mitsubishi Electric
Description 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V3436 page 2

MGFC36V3436 Overview

The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 2 1 N I M 2 OUTLINE DRAWING Unit.

MGFC36V3436 Key Features

  • 3.6 GHz High power gain GLP = 12 dB (TYP.) @ f=3.4
  • 3.6GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=3.4
  • 3.6GHz Low distortion [item -51] IM3=-45dBc(Typ.) @Po=25dBm S.C.L
  • 3.6 GHz band power amplifier item 51 : 3.4
  • 3.6 GHz band digital ratio munication
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