MGFC36V3436 Datasheet 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

Manufacturer: Mitsubishi Electric

Overview: MITSUBISHI SEMICONDUCTOR MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs.

Datasheet Details

Part number	MGFC36V3436
Manufacturer	Mitsubishi Electric
File Size	131.81 KB
Description	3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
Download	MGFC36V3436 Download (PDF)

The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

21.0 +/-0.3 2 N I.

Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP. ) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP. ) @ f=3.4 - 3.6GHz High power added efficiency P. A. E. = 32 % (TYP. ) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Typ. ) @Po=25dBm S. C. L. (1) 0.6 +/-0.15 (2) (2) R-1.6 3 . 1 1 (3) 10.7 2 . 0 / + 1 . 0 6 . 2.

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