MGFC36V4450A Datasheet | Mitsubishi Electric

DESCRIPTION The MGFC36V4450A is an internally impedance-matched Ga As power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit : millimeters 21.0 +/-0.3 FEATURES Class A operation Internally matched to 50(ohm) system High output power P1d B = 4W (TYP.) @ f=4.4~5.0GHz High power gain GLP = 12 d B (TYP.) @ f=4.4~5.0GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=4.4~5.0GHz Low distortion [ item -51 ] IM3= -45 d Bc(TYP.) @Po=25d Bm S.C.L. 2MIN (1) 0.6 +/-0.15 12.9 +/-0.2 (2) (2) R-1.6 11.3 2MIN (3) 10.7 17.0 +/-0.2 4.5 +/-0.4 item 01 : 4.4~5.0 GHz band power amplifier item 51 : 4.4~5.0 GHz band digital radio munication REMENDED BIAS CONDITIONS VDS = 10 (V) ID = 1.2(A) RG= 100 (ohm) Refer to Bias Procedure (Ta=25 deg.C) Ratings -15 -15 3.75 -10 21 25 175 -65 / +175 Unit V V A m A m A W deg.C deg.C QUALITY GRADE GF-8 (1) GATE (2) SOURCE (FLANGE) (3) DRAIN ABSOLUTE MAXIMUM RATINGS Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT Total power dissipation - 1 Tch Channel temperature Tstg Storage temperature - 1 : Tc=25 deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol Parameter (Ta=25 deg.C) Test conditions Min. 35 9 -42 Limits Typ. 1 37 12 32 -45 5 Max. 3.75 -4.5 1.8 6 Unit A S V d Bm d B A % d...