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MGFC36V4450A - 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET

Description

The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP. ) @ f=4.4~5.0GHz High power gain GLP = 12 dB (TYP. ) @ f=4.4~5.0GHz High power added efficiency P. A. E. = 32 % (TYP. ) @ f=4.4~5.0GHz Low distortion [ item -51 ] IM3= -45 dBc(TYP. ) @Po=25dBm S. C. L. 2MIN (1) 0.6 +/-0.15 12.9 +/-0.2 (2) (2) R-1.6 11.3 2MIN (3) 10.7 17.0 +/-0.2 4.5 +/-0.4 item 01 : 4.4~5.0 GHz band power amplifier item 51 : 4.4~5.0 GHz band digital radio communication IG.

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Full PDF Text Transcription

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MITSUBISHI SEMICONDUCTOR MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit : millimeters 21.0 +/-0.3 FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.) @ f=4.4~5.0GHz High power gain GLP = 12 dB (TYP.) @ f=4.4~5.0GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=4.4~5.0GHz Low distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=25dBm S.C.L. 2MIN (1) 0.6 +/-0.15 12.9 +/-0.2 (2) (2) R-1.6 11.3 2MIN (3) 10.7 17.0 +/-0.2 4.5 +/-0.4 item 01 : 4.4~5.
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