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MGFC36V5258

Manufacturer: Mitsubishi Electric
MGFC36V5258 datasheet preview

Datasheet Details

Part number MGFC36V5258
Datasheet MGFC36V5258_MitsubishiElectricSemiconductor.pdf
File Size 125.00 KB
Manufacturer Mitsubishi Electric
Description C band internally matched power GaAs FET
MGFC36V5258 page 2 MGFC36V5258 page 3

MGFC36V5258 Overview

The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC36V5258 Key Features

  • High output power
  • 5.8GHz
  • High power gain
  • 5.8GHz
  • High power added efficiency
  • 5.8GHz
  • 5.8 GHz band power amplifier
  • VDS=10V
  • ID=1.2A Refer to Bias Procedure
  • RG=100ohm
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