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MGFC36V5258 - C band internally matched power GaAs FET

Description

The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2

5.8 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=4W (TYP. ) @f=5.2.
  • 5.8GHz.
  • High power gain GLP=10dB (TYP. ) @f=5.2.
  • 5.8GHz.
  • High power added efficiency P. A. E. =32% (TYP. ) @f=5.2.
  • 5.8GHz.

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< C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W DESCRIPTION The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=4W (TYP.) @f=5.2 – 5.8GHz  High power gain GLP=10dB (TYP.) @f=5.2 – 5.8GHz  High power added efficiency P.A.E.=32% (TYP.) @f=5.2 – 5.8GHz APPLICATION  5.2 – 5.8 GHz band power amplifier QUALITY  IG 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 11.3 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 0.2 12.
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