Download MGFC36V5258 Datasheet PDF
MGFC36V5258 page 2
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MGFC36V5258 Description

The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC36V5258 Key Features

  • High output power
  • 5.8GHz
  • High power gain
  • 5.8GHz
  • High power added efficiency
  • 5.8GHz
  • 5.8 GHz band power amplifier
  • VDS=10V
  • ID=1.2A Refer to Bias Procedure
  • RG=100ohm