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MGFC36V5258 Datasheet C band internally matched power GaAs FET

Manufacturer: Mitsubishi Electric

Overview: < C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.

General Description

The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=4W (TYP. ) @f=5.2.
  • 5.8GHz.
  • High power gain GLP=10dB (TYP. ) @f=5.2.
  • 5.8GHz.
  • High power added efficiency P. A. E. =32% (TYP. ) @f=5.2.
  • 5.8GHz.