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MGFC36V6472A Datasheet C band internally matched power GaAs FET

Manufacturer: Mitsubishi Electric

Overview: < C band internally matched power GaAs FET > MGFC36V6472A 6.4 – 7.2 GHz BAND / 4W 11.

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General Description

The MGFC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=4W (TYP. ) @f=6.4.
  • 7.2GHz.
  • High power gain GLP=9.5dB (TYP. ) @f=6.4.
  • 7.2GHz.
  • High power added efficiency P. A. E. =30% (TYP. ) @f=6.4.
  • 7.2GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=25dBm S. C. L.

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