Datasheet4U Logo Datasheet4U.com

MGFC36V7177A Datasheet C band internally matched power GaAs FET

Manufacturer: Mitsubishi Electric

Overview: < C band internally matched power GaAs FET > MGFC36V7177A 7.1 – 7.7 GHz BAND / 4W 11.

📥 Download Datasheet

General Description

The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=4W (TYP. ) @f=7.1.
  • 7.7GHz.
  • High power gain GLP=9.0dB (TYP. ) @f=7.1.
  • 7.7GHz.
  • High power added efficiency P. A. E. =30% (TYP. ) @f=7.1.
  • 7.7GHz.
  • Low distortion [ item -51] IM3=-45dBc (TYP. ) @Po=25dBm S. C. L.

More Datasheets from Mitsubishi Electric

Part Number Description
MGFC36V7785 GaAs FET
MGFC36V7785A C band internally matched power GaAs FET
MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V3742A C band internally matched power GaAs FET
MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V5258 C band internally matched power GaAs FET
MGFC36V5964A C band internally matched power GaAs FET
MGFC36V6472A C band internally matched power GaAs FET
MGFC38V5867 C band internally matched power GaAs FET
MGFC38V5964 C band internally matched power GaAs FET