MGFC36V7785A
MGFC36V7785A is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
DESCRIPTION
The MGFC36V7785A is an internally impedance-matched Ga As power FET especially designed for use in 7.7
- 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system
- High output power
P1d B=4W (TYP.) @f=7.7
- 8.5GHz
- High power gain
GLP=8.0d B (TYP.) @f=7.7
- 8.5GHz
- High power added efficiency
P.A.E.=29% (TYP.) @f=7.7
- 8.5GHz
- Low distortion [item -51]
IM3=-45d Bc (TYP.) @Po=25d Bm S.C.L
APPLICATION
- item 01 : 7.7
- 8.5 GHz band power amplifier
- item 51 : 7.7
- 8.5 GHz band digital radio munication
2MIN
12.9 +/-0.2
2MIN
OUTLINE DRAW ING Unit : millimeters
21.0 +/-0.3 (1) 0.6 +/-0.15
(2) (2) R-1.6
(3) 10.7 17.0 +/-0.2
0.1 2.6 +/-0.2
4.5 +/-0.4 1.6
QUALITY
- IG
REMENDED BIAS CONDITIONS
- VDS=10V
- ID=1.2A Refer to Bias...
