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MGFC36V7785A Datasheet C band internally matched power GaAs FET

Manufacturer: Mitsubishi Electric

Overview: < C band internally matched power GaAs FET > MGFC36V7785A 7.7 – 8.5 GHz BAND / 4W 11.

General Description

The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=4W (TYP. ) @f=7.7.
  • 8.5GHz.
  • High power gain GLP=8.0dB (TYP. ) @f=7.7.
  • 8.5GHz.
  • High power added efficiency P. A. E. =29% (TYP. ) @f=7.7.
  • 8.5GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=25dBm S. C. L.