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MGFC5218 - K-Band 2-Stage Power Amplifier

Description

The MGFC5218 is a GaAs MMIC chip especially designed for 18.0 ~ 19.0 GHz band High Power Amplifier (MPA) .

Features

  • RF frequency : 18.0 to 19.0 GHz P1dB : ≥ 29.0 dBm(min. ) @ 18.0 to 19.0 GHz In Vd1 Out Vg1 Vg2 Vd1 Vd2 Chip size: 1940 µm x 2000 µm TARGET.

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Full PDF Text Transcription

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PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5218 K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5218 is a GaAs MMIC chip especially designed for 18.0 ~ 19.0 GHz band High Power Amplifier (MPA) . BLOCK DIAGRAM Vg1 Vg2 Vd1 Vd2 FEATURES RF frequency : 18.0 to 19.0 GHz P1dB : ≥ 29.0 dBm(min.) @ 18.0 to 19.0 GHz In Vd1 Out Vg1 Vg2 Vd1 Vd2 Chip size: 1940 µm x 2000 µm TARGET SPECIFICATIONS (Ta=25˚C) Symbol IDSS1 IDSS2 Vp1 Vp2 P1dB Gain Output Return Loss Parameter Drain Saturation Current Drain Saturation Current Pinch Off Voltage Pinch Off Voltage Output Power at 1 dB Compression Point Gain Output Return Loss f=18 - 20 GHz, Vd1=Vd2=6.
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