MGFK48G3745
MGFK48G3745 is Ku band internally matched power GaN HEMT manufactured by Mitsubishi Electric.
DESCRIPTION
The MGFK48G3745, Ga N HEMT with an N-channel schottky gate, is designed for Ku-band applications.
OUTLINE DRAWING
FEATURES
- High voltage operation VDS=24V
- High output power Po=48.3d Bm (TYP.) @Pin=42d Bm
- High efficiency PAE=33% (TYP.) @Pin=42d Bm
- Designed for use in Class AB linear amplifiers
APPLICATION
- Amplifier for Ku-band SAT
QUALITY
- General & Industrial
Packaging
- Individual case
REMENDED BIAS CONDITIONS
- Vds=24V
- Ids=1.44A
- Rg=13.3
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings Unit
Vgso Gate to Source Voltage at Operating
-10
Vds Drain to source voltage
IGF Forward gate current
IGR Reverse gate current
-24
PT- 1 Total power dissipation
Pin Input power
≦44
Tch Channel temperature
Tstg Storage temperature
-55 to +125
- 1:Tc=25C
Remended operating...
