Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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JFET Switching
N- Channel
- Depletion
3 GATE
1 DRAIN
2 SOURCE
MAXIMUM RATINGS
Rating Drain
- Source Voltage Drain
- Gate Voltage Gate
- Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IGF PD TJ Tstg Value 25 25 25 10 350 2.8
- 65 to +150
- 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C
1 2 3
CASE 29- 04, STYLE 5 TO- 92 (TO- 226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate
- Source Breakdown Voltage (IG = 10 µAdc,...
