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2N5555 - N-Channel JFET

Key Features

  • ° 40° 20° 10° 0° 0.5 100 0.4 50° 0.3 60° 70° 80° 0.1 90° 100° 110° 120° 900 900 0.2 ID = 0.25 IDSS 300° 290° 280° 270° 260° 250° 240° 60° 70° 80° 90° 100° 110° 120° 100 ID = IDSS 310° 50° 350° 340° 330° 320°.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5555/D JFET Switching N–Channel — Depletion 3 GATE 1 DRAIN 2N5555 2 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IGF PD TJ Tstg Value 25 25 25 10 350 2.