MRF6V3090NBR1 Datasheet PDF (RF Power Field Effect Transistors) | Download Motorola Semiconductor MRF6V3090NBR1

MRF6V3090NBR1 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF6V3090NBR1, a member of the MRF6V3090NR1 RF Power Field Effect Transistors family.

Description

22 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 43 pF Chip Capacitors 6.2 pF Chip Capacitor 2.2 pF Chip Capacitor 9.1 pF Chip Capacitor 220 μF, 100 V Electrolytic Capacitors 7.5 pF Chip Capacitors 3.0 pF Chip Capacitor 0.7 pF Chip Capacitor 10 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resi

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters.
Internally Input Matched for Ease of Use.
Qualified Up to a Maximum of 50 VDD Operation.
Integrated ESD Protection.
Excellent Thermal Stability.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
225°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. R5 Suffix =.

Datasheet Details

Part number	MRF6V3090NBR1
Manufacturer	Motorola Semiconductor
File Size	963.01 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6V3090NBR1 Datasheet
Additional preview pages of the MRF6V3090NBR1 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 22.0 dB Drain Efficiency — 28.5% ACPR @ 4 MHz Offset — --62.

Published: Jul 1, 2010 |