MRF6V3090NBR1
MRF6V3090NBR1 is RF Power Field Effect Transistors manufactured by Motorola Semiconductor.
- Part of the MRF6V3090NR1 comparator family.
- Part of the MRF6V3090NR1 comparator family.
Freescale Semiconductor Technical Data
Document Number: MRF6V3090N .. Rev. 0, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications.
- Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain
- 22.0 dB Drain Efficiency
- 28.5% ACPR @ 4 MHz Offset
- --62.0 dBc @ 4 kHz Bandwidth
- Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output...
