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MRF6V3090NR5 Datasheet Rf Power Field Effect Transistors

Manufacturer: Motorola Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

MRF6V3090NR5 Overview

Freescale Semiconductor Technical Data Document Number: MRF6V3090N .. Rev. 0, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 470-860 MHz, 90 W, 50 V LATERAL N-CHANNEL SINGLE-ENDED BROADBAND RF POWER MOSFETs

MRF6V3090NR5 Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters
  • Internally Input Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Excellent Thermal Stability
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation
  • 225°C Capable Plastic Package
  • RoHS pliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel

More Datasheets from Motorola Semiconductor

Part Number Description
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MRF6V3090NBR5 RF Power Field Effect Transistors
MRF6V2150N RF Power Field Effect Transistor
MRF6V2150NB RF Power Field Effect Transistor
MRF6V2300N RF Power Field Effect Transistor
MRF6V2300NB RF Power Field Effect Transistor
MRF648 RF POWER TRANSISTOR
MRF660 RF Power Transistor
MRF2001 Microwave Power Transistors

MRF6V3090NR5 Distributor