MRF6V3090NBR5 Description
Freescale Semiconductor Technical Data Document Number: 0, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications.
MRF6V3090NBR5 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Input Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Excellent Thermal Stability
- Greater Negative Gate--Source Voltage Range for Improved Class C Operation
- 225°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel