2N3072 Datasheet | Motorola Semiconductor

2N3072 (SILICON) 2N3073 PNP SILICON ANNULAR TRANSISTORS . designed for medium- speed, industrial switching applications. - Choice of Package and Power Ratings - Low Coliector- Emitter Saturation Voltage - VCE(sat) = 0.25 Vdc (Max) @ IC = 50 m Adc - High Small,Signal Current Gain - hfe = 180 (Max) @ IC = 10 m Adc - MAXIMUM RATINGS Rating Collector~Emitter Voltage Coliector- Sa.. Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation@TA=250e Derate above 25°C Total Device Dissipation @Te=250e Derate above 2So C Operating and Storage Junction Temperature Range "'Indicates JEQEC Registered Data. Symbol Ve EO Ves VES Ie Po Po TJ.Tstg 2N3072 2N3073 800 4.56 360 2.06 -65 to +200 Unit Vdc Vdc Vdc m Ade m W m W/oe Watts m W/oe °e FIGURE 1 - TURN- ON AND TURN- OFF SWITCH I NG TIMES TEST CI RCUIT +4.0 V -30 V PULSE GENERATOR Vin~:U- tr,tf~6.0ns pw. 0.5", Zin=50n 330...