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2N3072 (SILICON) 2N3073
PNP SILICON ANNULAR TRANSISTORS
. designed for medium·speed, industrial switching applications.
• Choice of Package and Power Ratings • Low Coliector·Emitter Saturation Voltage -
VCE(sat) = 0.25 Vdc (Max) @ IC = 50 mAdc • High Small,Signal Current Gain -
hfe = 180 (Max) @ IC = 10 mAdc
*MAXIMUM RATINGS Rating
Collector~Emitter Voltage Coliector·Sa.. Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation@TA=250e
Derate above 25°C Total Device Dissipation @Te=250e
Derate above 2SoC Operating and Storage Junction
Temperature Range
"'Indicates JEQEC Registered Data.
Symbol VeEO Ves VES
Ie
Po
Po
TJ.Tstg
2N3072 2N3073
60
60
4.0
500
800 4.56
360 2.06
3.0
1.2
17.1
6.
2N3072 Datasheet
