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BCW72 - Transistor

Download the BCW72 datasheet PDF. This datasheet also covers the BCW71 variant, as both devices belong to the same transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BCW71-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO ic THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, T"a = 25°C Derate above 25°C PD Storage Temperature Tstg Thermal Resistance Junction to Ambient R&JA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 45 50 5.0 100 Max 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW mW/X °C °C/W BCW71,72 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 2.0 mAdc, Veb = 0) Collector-Emitter Breakdown Voltage c(l = 2.