Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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High Voltage Transistor
PNP Silicon
1 BASE
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Emitter Voltage RBE = 10 kΩ Collector Current
- Continuous Symbol VCEO VCER
- 110 IC
- 100 Value
- 100
2 EMITTER
Unit Vdc Vdc mAdc
CASE 318
- 08, STYLE 6 SOT- 23 (TO
- 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max...
