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BSS63LT1G, NSVBSS63LT1G
High Voltage Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Emitter Voltage RBE = 10 kW Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO VCER
IC
−100
−110 −100
Vdc Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C
PD
mW 225 1.8 mW/°C
Thermal Resistance Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C
RqJA PD
556 °C/W
mW
300 mW/°C 2.
BSS63LT1G Datasheet
