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MCM69F817 - 256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM

General Description

Pin Locations 4B Symbol ADSC Type Input Description Synchronous Address Status Controller: Active low, interrupts any ongoing burst and latches a new external address.

Used to initiate a READ, WRITE, or chip deselect.

Key Features

  • it V V V V mA W °C °C This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MCM69F819 256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F536C 32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618C 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F735 128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM6926A 128K x 9 Bit Fast Static Random Access Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM69F817/D Product Preview MCM69F817 256K x 18 Bit Flow–Through BurstRAM™ Synchronous Fast Static RAM The MCM69F817 is a 4M bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the PowerPC™ and other high performance microprocessors. It is organized as 256K words of 18 bits each. This device integrates input registers, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K).