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MCM69F819 - 256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM

General Description

Pin Locations 4B Symbol ADSC Type Input Description Synchronous Address Status Controller: Active low, interrupts any ongoing burst and latches a new external address.

Used to initiate a READ, WRITE, or chip deselect.

Key Features

  • SBx SGW Input Input 98 SE1 Input 97 92 87 SE2 SE3 SW Input Input Input 15, 41, 65, 91 4, 11, 20, 27, 54, 61, 70, 77 5, 10, 17, 21, 26, 40, 55, 60, 67, 71, 76, 90 1, 2, 3, 6, 7, 14, 16, 25, 28, 29, 30, 38, 39, 42, 43, 51, 52.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM69F819/D 256K x 18 Bit Flow–Through BurstRAM Synchronous Fast Static RAM The MCM69F819 is a 4M bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the PowerPC™ and other high performance microprocessors. It is organized as 256K words of 18 bits each. This device integrates input registers, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K).